Versum Materials Thin Film Deposition Materials

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Product Name Description/Benefits

Antimony (Sb)

Versum Materials offers a series of advanced Germanium (Ge), Antimony (Sb) and Tellurium (Te) precursors for Thin Film Deposition of phase changing alloys such as GST. These precursors are volatile liquids which are suitable for direct evaporation at modest temperatures.

Bis(tertiary-butylamino)silane (BTBAS)

[Bis(tertiary-butylamino)silane] (BTBAS) is a precursor for depositing silicon nitride and silicon oxide films at lower temperatures.

Germanium (Ge)

Versum Materials offers a series of advanced Germanium (Ge), Antimony (Sb) and Tellurium (Te) precursors for Thin Film Deposition of phase changing alloys such as GST. These precursors are volatile liquids which are suitable for direct evaporation at modest temperatures.

Hafnium Tetrachloride (HfCl4)

Hafnium tetrachloride (HfCl4) is a solid source material for the atomic layer Thin Film Deposition (ALD) of hafnium oxide films.

Lanthanide (La)

Lanthanide (La) oxide is used in the High K dielectrics process as capping layers on other High K films, such as HfO2, or as stabilizers of crystalline forms of High K dielectrics, such as ZrO2.

Strontium (Sr)

Versum Materials offers a series of Sr precursors for Thin Film Deposition of Ultra High K STO (Strontium Titanate) films. These precursors comprise both pure compounds for direct evaporation and formulated mixtures for direct liquid injection through a suitable vaporizer.

Tantalum Tetraethoxide Dimethylaminoethoxide (TAT-DMAE)

Tantalum Tetraethoxide Dimethylaminoethoxide (TAT-DMAE), a Schumacher® product, is a liquid tantalum precursor source used for the Thin Film Deposition of high dielectric constant (20) tantalum films.

Tellurium (Te)

Versum Materials offers a series of advanced Germanium (Ge), Antimony (Sb) and Tellurium (Te) precursors for Thin Film Deposition of phase changing alloys such as GST. These precursors are volatile liquids which are suitable for direct evaporation at modest temperatures.

Tetraethyl Orthosilicate (TEOS)

Tetraethyl Orthosilicate (TEOS) is used as a semiconductor silicon source for the Thin Film Deposition of doped and undoped silicon dioxide films.  It is used as a replacement for silane and other pyrophoric silicon sources.

Tetrakis-dimethylamino Titanium (TDMAT)

Tetrakis-dimethylamino Titanium (TDMAT), a Schumacher® product, is a liquid chemical source suitable for the chemical vapor Thin Film Deposition (CVD) of titanium nitride films.

Tetrakis-ethylmethylamino Zirconium (TEMAZ)

Tetrakis-ethylmethylamino Zirconium (TEMAZ) is a liquid chemical source suitable for chemical vapor Thin Film Deposition or atomic layer Thin Film Deposition of zirconium oxide films. ZrO films are effective high-k dielectrics in IC applications.

Tetramethylcyclotetrasiloxane (ZTOMCATS™)

EXTREMA® Tetramethylcyclotetrasiloxane (ZTOMCATS™), a Schumacher® product, is used as a silicon source for the chemical vapor Thin Film Deposition (CVD) of high quality low dielectric constant films and silicon dioxide films.

Tetramethylsilane (Z4MS™)

EXTREMA® Z4MS™ (Tetramethylsilane) is a precursor for depositing carbon doped silicon films and silicon carbide-like films.

TiCl4 (Titanium Tetrachloride)

Titanium Tetrachloride (TiCl4), a Schumacher® product, is a liquid source material for the chemical vapor Thin Film Deposition (CVD) of titanium nitride, titanium dioxide and titanium metal.

Titanium (Ti)

Versum Materials offers a series of advanced Ti precursors for Thin Film Deposition of High K and Ultra High K dielectric films. These closely related compounds allow you to tailor the precursor to suit your processing requirements by selecting for properties such as Thin Film Deposition temperature, Thin Film Deposition rate, vapor pressure, etc. These precursors represent a technological advance over conventional precursors, such as TDMAT, in their ability todeposit films at relatively high temperatures in a self-limiting ALD mode.

Yittrium (Y)

Yttrium (Y) oxide is used in the High K dielectrics process as capping layers on other High K films, such as HfO2, or as stabilizers of crystalline forms of High K dielectrics, such as ZrO2.

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