Dow® UVN30 Negative DUV Photoresist

Spin Speed Curve for Dow UVN30 Products

UVN30 is a negative photoresist for DUV, X-Ray and E-Beam applications. Minimal PEB sensitivity, insensitivity to airborne contaminants and superior metal etch resistance.
i-Line (310 mJ/cm2)

Typical Process



Thickness: 0.5µm-0.8µm
Softbake: 90°C/60sec Proximity
Expose: DUV, X-ray, E-Beam
PEB: 95°C/60sec Proximity
Develop: MF-CD26 or 26A 21°C 30sec single puddle