KemLab® KL5302 Hi-Res Ultra Thin Resist

Spin Speed Curve for KemLab KL 5302 Photoresist

KemLab KL 5302 Hi-Res resist for maskless grating patterning using interference lithography. Newly formulated to provide improved control during exposure and develop. KL 5302 Hi-Res Ultra Thin Resist is designed for i-line, g-line, and broadband exposures, but especially for applications where pattern collapse is an issue.

Typical Process

Thickness: 200nm
Softbake: 105°C/60sec
Expose: Broadband, i-line, g-line
PEB: 115°C/60sec
Develop: 0.26N TMAH