KemLab® APOL-LO 3200 Hi-Res Negative Lift-Off Photoresist

Spin Speed Curve for APOL-LO 3200 Hi-Res Negative Lift-Off Photoresist
APOL-LO-Hi-Res-Negative-Lift-Off-Spin-Speed

APOL-LO Photoresist adheres to a variety of substrates; including gold, glass, aluminum, chromium and copper. For silicon, HMDS (hexamethyldisilazane) primer can increase adhesion.
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APOL-LO-3200-Hi-Res-Negative-Lift-Off-Photoresist-SEM-Image

Typical Process

 

Negative Lift Off Resist Mode

Thickness: 2µm-10µm
Expose: Broadband, i-Line
Soft Bake: 110°C/60sec
Soft Bake For films over 7 microns: 110°C/90sec
Post-Exposure Bake (PEB): 110°C/60sec
Exposure (Broadband): 140mJ/cm2
Exposure (Broadband) For films over 7 microns: 200mJ/cm2
Develop: 0.26N TMAH
Removal: NMP/DMSO based strippers